Specifications
| Supplier Device Package | TO-92-3 |
|---|---|
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 50 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 5Ohm @ 500mA, 10V |
| Technology | MOSFET (Metal Oxide) |
| Current | 200mA (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Drain to Source Voltage (Vdss) | 60 V |
| Mounting Type | Through Hole |
| Vgs (Max) | ±20V |
| Package | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Power Dissipation (Max) | 400mW (Ta) |