Specifications
| Supplier Device Package | 8-SOIC |
|---|---|
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| FET Type | P-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 4750 pF @ 6 V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 11A, 4.5V |
| Technology | MOSFET (Metal Oxide) |
| Gate Charge (Qg) (Max) @ Vgs | 47 nC @ 4.5 V |
| Current | 11A (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Drain to Source Voltage (Vdss) | 12 V |
| Mounting Type | Surface Mount |
| Vgs (Max) | ±8V |
| Package | 8-SOIC (0.154", 3.90mm Width) |
| Power Dissipation (Max) | 3W (Ta) |