Specifications
| Supplier Device Package | TO-236AB |
|---|---|
| Vgs(th) (Max) @ Id | 950mV @ 250µA |
| FET Type | P-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 418 pF @ 10 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V |
| Rds On (Max) @ Id, Vgs | 170mOhm @ 2A, 4.5V |
| Technology | MOSFET (Metal Oxide) |
| Gate Charge (Qg) (Max) @ Vgs | 6.5 nC @ 4.5 V |
| Current | 2A (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Drain to Source Voltage (Vdss) | 20 V |
| Mounting Type | Surface Mount |
| Vgs (Max) | ±8V |
| Package | TO-236-3, SC-59, SOT-23-3 |
| Power Dissipation (Max) | 480mW (Ta) |