Specifications
| Supplier Device Package | TO-236AB |
|---|---|
| Vgs(th) (Max) @ Id | 2.1V @ 250µA |
| FET Type | P-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 36 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 7.5Ohm @ 100mA, 10V |
| Technology | MOSFET (Metal Oxide) |
| Gate Charge (Qg) (Max) @ Vgs | 0.35 nC @ 5 V |
| Current | 180mA (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Drain to Source Voltage (Vdss) | 50 V |
| Mounting Type | Surface Mount |
| Vgs (Max) | ±20V |
| Package | TO-236-3, SC-59, SOT-23-3 |
| Power Dissipation (Max) | 350mW (Ta), 1.14W (Tc) |