Specifications
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
|---|---|
| FET Type | P-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 834 pF @ 10 V |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Rds On (Max) @ Id, Vgs | 38mOhm @ 8.9A, 4.5V |
| Technology | MOSFET (Metal Oxide) |
| Gate Charge (Qg) (Max) @ Vgs | 8.6 nC @ 4.5 V |
| Current | 5.5A (Ta), 13A (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Drain to Source Voltage (Vdss) | 20 V |
| Vgs (Max) | ±12V |
| Power Dissipation (Max) | 1.2W (Ta) |