Specifications
| Supplier Device Package | EMT6 |
|---|---|
| Vgs(th) (Max) @ Id | 800mV @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 26pF @ 10V |
| Configuration | 2 N-Channel (Dual) |
| Rds On (Max) @ Id, Vgs | 2.2Ohm @ 200mA, 4.5V |
| Technology | MOSFET (Metal Oxide) |
| Current | 200mA |
| Operating Temperature | 150°C (TJ) |
| Drain to Source Voltage (Vdss) | 50V |
| Mounting Type | Surface Mount |
| Package | SOT-563, SOT-666 |
| FET Feature | Logic Level Gate, 0.9V Drive |
| Power | 120mW |