Specifications
| Supplier Device Package | Die |
|---|---|
| Vgs(th) (Max) @ Id | 2.5V @ 3mA |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 540 pF @ 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 12A, 5V |
| Technology | GaNFET (Gallium Nitride) |
| Gate Charge (Qg) (Max) @ Vgs | 5.3 nC @ 5 V |
| Current | 22A (Ta) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Drain to Source Voltage (Vdss) | 200 V |
| Mounting Type | Surface Mount |
| Vgs (Max) | +6V, -4V |
| Package | Die |