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Onsemi

FDC658AP

Total in Stock: 7 parts

Onsemi

FDC658AP

MOSFET P-CH 30V 4A SUPERSOT6
Specifications
Supplier Device Package SuperSOT™-6
Vgs(th) (Max) @ Id 3V @ 250µA
FET Type P-Channel
Input Capacitance (Ciss) (Max) @ Vds 470 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 50mOhm @ 4A, 10V
Technology MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs 8.1 nC @ 5 V
Current 4A (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss) 30 V
Mounting Type Surface Mount
Vgs (Max) ±25V
Package SOT-23-6 Thin, TSOT-23-6
Power Dissipation (Max) 1.6W (Ta)

Talk to a Human: (608) 338-0082