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Onsemi

FDD8870

Total in Stock: 7038 parts

Onsemi

FDD8870

MOSFET N-CH 30V 21A/160A TO252AA
Specifications
Supplier Device Package TO-252AA
Vgs(th) (Max) @ Id 2.5V @ 250µA
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 5160 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.9mOhm @ 35A, 10V
Technology MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs 118 nC @ 10 V
Current 21A (Ta), 160A (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Drain to Source Voltage (Vdss) 30 V
Mounting Type Surface Mount
Vgs (Max) ±20V
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Power Dissipation (Max) 160W (Tc)

Talk to a Human: (608) 338-0082