Specifications
| Supplier Device Package | PG-TO263-3-2 |
|---|---|
| Vgs(th) (Max) @ Id | 4.6V @ 160µA |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 4700 pF @ 75 V |
| Drive Voltage (Max Rds On, Min Rds On) | 8V, 10V |
| Rds On (Max) @ Id, Vgs | 7.3mOhm @ 57A, 10V |
| Technology | MOSFET (Metal Oxide) |
| Gate Charge (Qg) (Max) @ Vgs | 61 nC @ 10 V |
| Current | 114A (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Drain to Source Voltage (Vdss) | 150 V |
| Mounting Type | Surface Mount |
| Vgs (Max) | ±20V |
| Package | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Power Dissipation (Max) | 214W (Tc) |