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Infineon Technologies

IPB320N20N3GATMA1

Total in Stock: 436 parts

Infineon Technologies

IPB320N20N3GATMA1

MOSFET N-CH 200V 34A D2PAK
Specifications
Supplier Device Package PG-TO263-3
Vgs(th) (Max) @ Id 4V @ 90µA
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 2350 pF @ 100 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 32mOhm @ 34A, 10V
Technology MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 10 V
Current 34A (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Drain to Source Voltage (Vdss) 200 V
Mounting Type Surface Mount
Vgs (Max) ±20V
Package TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Max) 136W (Tc)

Talk to a Human: (608) 338-0082