Specifications
| Supplier Device Package | PG-TO252-3-313 |
|---|---|
| Vgs(th) (Max) @ Id | 2.2V @ 85µA |
| FET Type | P-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 3900 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 10.6mOhm @ 50A, 10V |
| Technology | MOSFET (Metal Oxide) |
| Gate Charge (Qg) (Max) @ Vgs | 59 nC @ 10 V |
| Current | 50A (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Drain to Source Voltage (Vdss) | 40 V |
| Mounting Type | Surface Mount |
| Vgs (Max) | +5V, -16V |
| Package | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Power Dissipation (Max) | 58W (Tc) |