Specifications
| Supplier Device Package | DFN1006B-3 |
|---|---|
| Vgs(th) (Max) @ Id | 1.3V @ 250µA |
| FET Type | P-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 87 pF @ 10 V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Rds On (Max) @ Id, Vgs | 850mOhm @ 400mA, 4.5V |
| Technology | MOSFET (Metal Oxide) |
| Gate Charge (Qg) (Max) @ Vgs | 1.14 nC @ 4.5 V |
| Current | 680mA (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Drain to Source Voltage (Vdss) | 20 V |
| Mounting Type | Surface Mount |
| Vgs (Max) | ±8V |
| Package | 3-XFDFN |
| Power Dissipation (Max) | 360mW (Ta), 2.7W (Tc) |