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Rohm Semiconductor

RJP020N06T100

Total in Stock: 3 parts

Rohm Semiconductor

RJP020N06T100

MOSFET N-CH 60V 2A MPT3
Specifications
Supplier Device Package MPT3
Vgs(th) (Max) @ Id 1.5V @ 1mA
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 160 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 240mOhm @ 2A, 4.5V
Technology MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs 10 nC @ 4 V
Current 2A (Ta)
Operating Temperature 150°C (TJ)
Drain to Source Voltage (Vdss) 60 V
Mounting Type Surface Mount
Vgs (Max) ±12V
Package TO-243AA
Power Dissipation (Max) 500mW (Ta)

Talk to a Human: (608) 338-0082