Specifications
| Supplier Device Package | TSMT3 |
|---|---|
| Vgs(th) (Max) @ Id | 1.5V @ 1mA |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 200 pF @ 10 V |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 2A, 4.5V |
| Technology | MOSFET (Metal Oxide) |
| Gate Charge (Qg) (Max) @ Vgs | 4.1 nC @ 4.5 V |
| Current | 2A (Ta) |
| Operating Temperature | 150°C (TJ) |
| Drain to Source Voltage (Vdss) | 45 V |
| Mounting Type | Surface Mount |
| Vgs (Max) | ±12V |
| Package | SC-96 |
| Power Dissipation (Max) | 1W (Ta) |