Specifications
| Supplier Device Package | SOT-23-3 (TO-236) |
|---|---|
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| FET Type | P-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 500 pF @ 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Rds On (Max) @ Id, Vgs | 270mOhm @ 1.2A, 10V |
| Technology | MOSFET (Metal Oxide) |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
| Current | 2.2A (Tc) |
| Operating Temperature | -50°C ~ 150°C (TJ) |
| Drain to Source Voltage (Vdss) | 80 V |
| Mounting Type | Surface Mount |
| Vgs (Max) | ±20V |
| Package | TO-236-3, SC-59, SOT-23-3 |
| Power Dissipation (Max) | 760mW (Ta), 2.5W (Tc) |