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Vishay

SI8819EDB-T2-E1

Total in Stock: 5047 parts

Vishay

SI8819EDB-T2-E1

MOSFET P-CH 12V 2.9A 4MICRO FOOT
Specifications
Supplier Device Package 4-MICRO FOOT® (0.8x0.8)
Vgs(th) (Max) @ Id 900mV @ 250µA
FET Type P-Channel
Input Capacitance (Ciss) (Max) @ Vds 650 pF @ 6 V
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 3.7V
Rds On (Max) @ Id, Vgs 80mOhm @ 1.5A, 3.7V
Technology MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 8 V
Current 2.9A (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss) 12 V
Mounting Type Surface Mount
Vgs (Max) ±8V
Package 4-XFBGA
Power Dissipation (Max) 900mW (Ta)

Talk to a Human: (608) 338-0082