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Vishay

SIR818DP-T1-GE3

Total in Stock: 100 parts

Vishay

SIR818DP-T1-GE3

MOSFET N-CH 30V 50A PPAK SO-8
Specifications
Supplier Device Package PowerPAK® SO-8
Vgs(th) (Max) @ Id 2.4V @ 250µA
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 3660 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.8mOhm @ 20A, 10V
Technology MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs 95 nC @ 10 V
Current 50A (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss) 30 V
Mounting Type Surface Mount
Vgs (Max) ±20V
Package PowerPAK® SO-8
Power Dissipation (Max) 5.2W (Ta), 69W (Tc)

Talk to a Human: (608) 338-0082