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Vishay

SIR882ADP-T1-GE3

Total in Stock: 15 parts

Vishay

SIR882ADP-T1-GE3

MOSFET N-CH 100V 60A PPAK SO-8
Specifications
Supplier Device Package PowerPAK® SO-8
Vgs(th) (Max) @ Id 2.8V @ 250µA
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 1975 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 8.7mOhm @ 20A, 10V
Technology MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs 60 nC @ 10 V
Current 60A (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss) 100 V
Mounting Type Surface Mount
Vgs (Max) ±20V
Package PowerPAK® SO-8
Power Dissipation (Max) 5.4W (Ta), 83W (Tc)

Talk to a Human: (608) 338-0082