Specifications
| Supplier Device Package | PG-TO220-3-1 |
|---|---|
| Vgs(th) (Max) @ Id | 3.9V @ 1mA |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 2320 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 290mOhm @ 11A, 10V |
| Technology | MOSFET (Metal Oxide) |
| Gate Charge (Qg) (Max) @ Vgs | 177 nC @ 10 V |
| Current | 17A (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Drain to Source Voltage (Vdss) | 800 V |
| Mounting Type | Through Hole |
| Vgs (Max) | ±20V |
| Package | TO-220-3 |
| Power Dissipation (Max) | 208W (Tc) |