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Vishay

SUD35N10-26P-T4GE3

This order may require lead time

Vishay

SUD35N10-26P-T4GE3

MOSFET N-CH 100V 35A TO252
Specifications
Supplier Device Package TO-252AA
Vgs(th) (Max) @ Id 4.4V @ 250µA
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 2000 pF @ 12 V
Drive Voltage (Max Rds On, Min Rds On) 7V, 10V
Rds On (Max) @ Id, Vgs 26mOhm @ 12A, 10V
Technology MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs 47 nC @ 10 V
Current 35A (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Drain to Source Voltage (Vdss) 100 V
Mounting Type Surface Mount
Vgs (Max) ±20V
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Power Dissipation (Max) 8.3W (Ta), 83W (Tc)

Talk to a Human: (608) 338-0082